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정보제공 : ZEUS 장비활용종합포털(www.zeus.go.kr)

광절연막 제거 장비

Laser Lift-Off (LLO)

GBTP No. GBREMS-18-0068
NFEC등록번호 NFEC-2013-11-184015
I-tube등록번호 1307-C-0129
보유기관 영남대학교 산학협력단
연락처 053-810-2344
대표번호 -

장비정보

모델명 ELMS-1000 제작사 큐엠씨
취득일자 2014-09-22 취득금액 522,000,000원
표준분류 기계가공/시험장비 > 반도체장비 > 가공/리페어/절단장비 활용용도 시험
장비위치
경상북도 경산시 대학로 280 (대동) 214-1번지 영남대학교 CRC F1층 클린룸(102)
장비설명 1. Laser Lift-Off (LLO) provides a way to separate the GaN layer from sapphire/SiC
substrate.
2. GaN based LED dies can be debonded from the substrate and the energy density be
chosen to meet the optimum debonding conditions.
구성 및 기능 1. Material: GaN on Sapphire/SiC substrate etc
2. Full Automatic Operation System
- Automatic wafer alignment laser beam focusing wafer loading/unloading System
3. Laser System
- Type: 248nm KrF excimer laser (Cohearent 社)
- Pulse energy: Max. >600mJ
- Energy stability: 1%@2o
4. Working Stage System
1) X-Y axis: Up to 6 inch wafer
2) Z axis: 15mm or more
3) Theta(8) axis: 30 degrees or more
4) Flatness: < :t 10um in 6 inch area
5) Wafer chuck: Special vacuum chuck for uniform holding force across wafer
5. Beam Delivery System
1) Beam delivery support structure
- Vibration isolating mounting platform for 3 axes stages and beam delivery optics
2) Purging system
- N2 purged beam delivery system for best laser beam transmission and longer
life time of optics
3) Beam size: Max. 3 x 3mm2
4) Inhomogeneity: <:t5%@2o
6. Vision System
1) Process monitoring camera: Zoom vision system Optical magnification CCD camera
2) Alignment and inspection camera: Monitoring system with energy meter on the wafer
stage Beam profiler on mask
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